The D882 (2SD882) is a mediumpower NPN bipolar junction transistor (BJT) housed in a TO126 package. It is a highperformance, generalpurpose transistor designed for switching and amplification applications requiring up to 3A of collector current. Its complementary PNP transistor is the 2SB772.
| Parameter | Value | Notes |
|---|---|---|
| -- | -- | -- |
| Collector-Emitter Voltage (VCEO) | 30V | Maximum continuous voltage |
| Collector-Base Voltage (VCBO) | 40V | |
| Emitter-Base Voltage (VEBO) | 5V to 6V | |
| Collector Current (IC) | 3A | Continuous current rating |
| Power Dissipation (Ptot) | 1.25W (Free air) / 10W (With heatsink) | |
| DC Current Gain (hFE) | 60 - 400 | Depends on ranking |
| Transition Frequency (fT) | 90 MHz | Typical value |
| Operating/Storage Temperature | -55°C to +150°C |
High Current Capability 3A continuous collector current for driving mediumpower loads
Low Saturation Voltage - 0.5V maximum at IC = 2A ensures low conduction losses
Medium Power Dissipation - 10W with proper heatsinking for power applications
Complementary PNP Design - Designed as a complementary transistor to the 2SB772 (PNP)
High Gain Range - Available in hFE rankings from 60 to 400
√ Ready to use Standard TO126 package for easy through-hole mounting
√ Multiple hFE ranks - Available in R, O, Y, and GR ranks with different gain ranges
√ High transition frequency - 90 MHz for good performance in amplifier circuits
Avoid exceeding the maximum voltage ratings the collector-emitter voltage (VCEO) of 30V is critical
-Avoid exceeding the maximum junction temperature of 150°C
-Avoid using this transistor as a direct replacement without confirming the pinout and specifications
