The B649 (also designated as 2SB649) is a highvoltage PNP bipolar junction transistor housed in a TO126 package . It is designed as a complementary device to the NPN transistor 2SD669, forming a popular pair for low-frequency power amplifier circuits .
| Parameter | Value | Notes |
|---|---|---|
| -- | -- | -- |
| Collector-Base Voltage (VCBO) | -180V | |
| Collector-Emitter Voltage (VCEO) | 120V (B649) / 160V (B649A) | Maximum continuous voltage |
| Emitter-Base Voltage (VEBO) | -5V | |
| Collector Current (IC) | -1.5A | Continuous current rating |
| Peak Collector Current (ICM) | -3A | Non-repetitive peak current |
| Power Dissipation (Ptot) | 1W (at Ta=25°C) / 20W (at Tc=25°C) | With appropriate heatsink |
| DC Current Gain (hFE) | 60 - 320 | Depends on rank: B(60120), C(100200), D(160-320) |
| Transition Frequency (fT) | 140 MHz | Typical value |
| Operating/Storage Temperature | -55°C to +150°C |
High Voltage Capability 180V VCBO and 120V/160V VCEO for highvoltage applications
Complementary Pair - Designed as a complementary transistor to the 2SD669/2SD669A (NPN)
High Gain Linearity Excellent hFE linearity for lowdistortion audio applications
Low Saturation Voltage - 1V max at IC = 500mA ensures low conduction losses
√ Ready to use Standard TO126 package for easy through-hole mounting
√ Multiple hFE ranks - Choose B, C, or D rank for gain matching in amplifier circuits
√ High transition frequency - 140 MHz for good audio performance
Avoid exceeding the maximum voltage ratings the collectoremitter voltage (VCEO) of 120V (or -160V for 'A' variant) is critical
-Avoid exceeding the maximum junction temperature of 150°C
-Avoid using this transistor as a direct replacement without confirming the pinout and specifications
