The BD235 is a mediumpower NPN bipolar junction transistor (BJT) housed in a TO126 package . It is part of the BD23x series and is designed as a complementary device to the PNP transistor BD236 . This transistor is wellsuited for a variety of mediumpower linear and switching applications .
| Parameter | Value | Notes |
|---|---|---|
| -- | -- | -- |
| Collector-Emitter Voltage (VCEO) | 60V | Maximum continuous voltage |
| Collector-Base Voltage (VCBO) | 60V | |
| Emitter-Base Voltage (VEBO) | 5V | |
| Collector Current (IC) | 2A | Continuous current rating |
| Peak Collector Current (ICM) | 2A | Non-repetitive peak current |
| Power Dissipation (Ptot) | 25W (with heatsink) | At case temperature of 25°C |
| Power Dissipation (Ptot) | 1.25W (without heatsink) | At ambient temperature of 25°C |
| DC Current Gain (hFE) | 40 - 130 | At IC = 150mA, VCE = 2V |
| Transition Frequency (fT) | 3 MHz | |
| Operating Temperature Range | -65°C to +150°C | Junction temperature range |
NPN Complement Designed as a complementary transistor to the BD236 (PNP) for pushpull amplifier configurations
Medium Power Capability - 2A collector current and 25W power dissipation for demanding applications
Low Saturation Voltage - 0.6V max at IC = 1A ensures low losses
GlassPassivated Junction Provides reliability and high thermal cycling performance
Wide Operating Temperature Range 65°C to +150°C for demanding environments
√ Ready to use A standard and welldocumented power transistor
√ Medium power capability - Suitable for a wide range of applications
Avoid exceeding the maximum voltage ratings the collector-emitter voltage (VCEO) of 60V is critical
-Avoid exceeding the maximum junction temperature of 150°C
-Avoid using this transistor as a direct replacement for a PNP transistor without checking the pinout
