The BD136 is a mediumpower PNP bipolar junction transistor (BJT) housed in a TO126 (SOT32) plastic package. Designed as a complementary device to the NPN transistor BD135, it is wellsuited for a variety of driver stages in hifi amplifiers, television circuits, and general-purpose power applications.
| Parameter | Value | Notes |
|---|---|---|
| -- | -- | -- |
| Collector-Base Voltage (VCBO) | -45V | BD136 rating |
| Collector-Emitter Voltage (VCEO) | -45V | Maximum continuous voltage |
| Emitter-Base Voltage (VEBO) | -5V | |
| Collector Current (IC) | -1.5A | Continuous current rating |
| Peak Collector Current (ICM) | -2A | Non-repetitive peak current |
| Power Dissipation (Ptot) | 8W | At case temperature ≤70°C |
| Power Dissipation (Ptot) | 1.25W | Without heatsink at 25°C ambient |
| DC Current Gain (hFE) | 40 - 250 | Depends on variant and conditions |
| Transition Frequency (fT) | 160 MHz | Typical value |
| Operating/Storage Temperature | -65°C to +150°C |
Complementary PNP Design - Designed as a complementary transistor to the BD135 (NPN)
High Current Capability 1.5A continuous collector current for mediumpower applications
Low Saturation Voltage 0.5V maximum at IC = 500mA ensures low conduction losses
Versatile Performance - 160 MHz transition frequency for suitability in audio and RF driver stages
√ Ready to use A standard and welldocumented power transistor
√ Medium power capability - Suitable for a wide range of applications
Avoid exceeding the maximum voltage ratings the collectoremitter voltage (VCEO) of 45V is critical
-Avoid exceeding the maximum junction temperature of 150°C
-Avoid using this transistor as a direct replacement without confirming the pinout and specifications